Epitaxial PLT thin films prepared by a sol-gel process

Abstract

Lead lanthanum titanate (PLT) ferroelectric thin films with (001) orientation have been epitaxially grown on La0.5Sr0.5CoO3(LSCO)/LaALO3(LAO) substrates by a sol-gel process followed by rapid annealing at 650[ddot]C. PLT (111) films have also been successfully prepared on Pt(111)/Ti/SiO2/Si substrates. 2θ scans, φ scans and rocking curves obtained in x-ray diffraction measurements reveal the high epitaxy of these films. The PLT (111) films exhibit good dielectric and ferroelectric properties and may be useful as infrared sensors.