Epitaxial Orientation of β-FeSi2 on 3C-SiC/Si(111)

Abstract

(100)-oriented β-FeSi2 films were expitaxially grown on a SiC (3C-SiC)-buffered Si(111) substrate by cosputtering iron and silicon. The full width at half maximum (FWHM) of the rocking curve of the β-FeSi2 800 diffraction peaks was 0.37° for the films deposited at 750 °C, which is the same as that for epitaxial β-FeSi2 films on the Si(111) substrate. These epitaxial films had a triple-domain structure. The photoluminescence spectrum from β-FeSi2 was observed at 10 K, and roughly had four luminescence bands.