Abstract
Pulsed laser irradiation was used to induce silicide formation in Ni thin layer deposited onto Si substrates of 〈100〉 and 〈111〉 orientation, respectively. Suitable energy densities of the 30-ns Nd glass laser pulse produced epitaxial NiSi2 silicide for a 15-nm-thick Ni layer. Irradiation of thicker metal films formed instead several silicides of nonuniform composition.
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