Abstract
Thin films of epitaxial NiSi2 and CoSi2 were formed by short-duration incoherent light exposure of evaporated Ni or Co films on Si single crystals. The crystalline quality of these suicides is comparable to what has been obtained for long-duration furnace annealed suicides, as deduced from channeling measurements. NiSi2 is of high crystalline quality at all temperatures at which it is formed whereas the CoSi2 films recrystallize at a temperature of ∼980°C.
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