Abstract
The structural and magnetic properties of epitaxial Mn2VAl films grown by molecular beam epitaxy are investigated. Epitaxial Mn2VAl films with a relatively high L21-ordering of ∼0.7 are obtained on MgO(001) substrates at a growth temperature of 350 °C. The saturation magnetic moment at 300 K for the epitaxial Mn2VAl films is ∼1.2 μB/f.u., which is almost equivalent to the highest value for high-temperature-grown thin-film samples reported previously. Due to the low-temperature synthesis of L21-Mn2VAl, an epitaxial all-Heusler L21-Mn2VAl/L21-Fe2VAl/L21-Mn2VAl trilayer with sharp heterointerfaces is obtained. This study presents the possibility of all-Heusler current-perpendicular-to-plane giant magnetoresistive devices with high performance.
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