Abstract
The defect structures at epitaxial CoSi 2 interfaces were imaged by means of scanning tunneling microscopy, scanning tunneling spectroscopy (STS), modulation spectroscopy (MS), and ballistic electron-emission microscopy (BEEM). Interfacial dislocations and point defects in thin films give rise to significant contrast in BEEM images. The lateral variations of the film thickness can be determined with monolayer precision by making use of the quantum size effect in STS or MS, and of the inelastic hot electron scattering within CoSi 2 in BEEM.
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