Abstract
La-doped BaSnO3 has been epitaxially integrated with (001) Si using an SrTiO3 buffer layer via molecular-beam epitaxy (MBE). A 254 nm thick undoped BaSnO3 buffer layer was grown to enhance the mobility of the overlying La-doped BaSnO3 layer. The x-ray diffraction rocking curve of the BaSnO3 002 peak has a full width at half maximum of 0.02°. At room temperature, the resistivity of the La-doped BaSnO3 film is 3.6 × 10−4 Ω cm and the mobility is 128 cm2 V−1 s−1 at a carrier concentration of 1.4 × 1020 cm−3. These values compare favorably to those of La-doped BaSnO3 films grown by all techniques other than MBE on single-crystal oxide substrates. Our work opens an exciting arena for integrating hyper-functional oxide electronics that make use of high-mobility oxide films with the workhorse of the semiconductor industry, silicon.
Highlights
There is no report of growing La-doped BaSnO3 films on the backbone of semiconductor industry, silicon
We report growth of La-doped BaSnO3 films on (001) Si using a SrTiO3 buffer layer grown by molecular-beam epitaxy (MBE)
The SrTiO3 buffer layer and the La-doped BaSnO3 film were grown in a Veeco GEN10 dual-chamber MBE system
Summary
There is no report of growing La-doped BaSnO3 films on the backbone of semiconductor industry, silicon. We report growth of La-doped BaSnO3 films on (001) Si using a SrTiO3 buffer layer grown by molecular-beam epitaxy (MBE).
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