Epitaxial growth of thin GaAs layers by hot-wall epitaxy on transparent substrates

Abstract

Hot-Wall Epitaxy (HWE) is a vacuum-evaporation technique whose main characteristic is the possibility to grow epitaxial layers with a minimum loss of material and under conditions closer to thermodynamic equilibrium than most other evaporation methods. Until now the HWE technique was used to grow layers of IV–VI and II–VI compounds. In this work we report for the first time on the capability of this technique of producing epitaxial GaAs films with controlled stoichiometry on SrF 2 substrates. The growth of GaAs layers on transparent substrates allowed optical investigations to characterize the layers. Finally we report our first results of doping experiments with Mn.