Abstract
Silicon has been grown epitaxially on silicon substrates by a process of vacuum sublimation. The important new features of the system are that the reaction chamber contains only silicon and quartz and that the chamber is continuously pumped throughout the process to a pressure of . The physical support for the substrate acts as the source of silicon as well as the source of dopant. In this way a high degree of control of the thickness and resistivity uniformity and reproducibility have been obtained with both n‐ and p‐type epitaxial films on both n‐ and p‐type substrates. Based on the behavior of three source crystals, it is believed that epitaxial layers of any desired resistivity can be grown by given source material of specified purity. The details of the system and an analysis of the results are given. Preliminary results obtained on heterojunctions grown in a similar manner are also reported.
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