Abstract
Epitaxial layers of Si were grown on GaP and Si and the process was monitored by soft X-ray reflection. The method can in principle be used to distinguish between different growth models. We report a search for monolayer oscillations in the reflectivity as a result of layer by layer growth. We conclude that soft X-ray reflection can be an additional tool in thin film growth- and surface-analysis.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
