Abstract
We demonstrate the epitaxial growth of hexagonal Pr2O3(001) on Si(111), with x-ray ω-scan full width at half maximum values as low as 0.06°, which is comparable with Si substrates. We find that a phase transition takes place during the anneal of the as-grown films in N2 below the growth temperature. The annealed films display a cubic structure isomorphic to manganese oxide, (111) oriented but 180° rotated about the Si(111) surface normal. The phase transition can be due to nitrogen incorporation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
