Epitaxial growth of NiSi2 induced by sulfur segregationat the NiSi2/Si(100) interface

Abstract

Epitaxial growth of a NiSi2 layer was observed on S+ ion-implanted Si(100) at a low temperature of 550 °C. Depending on the S+ dose and the Ni thickness, we identified different nickel silicide phases. High quality and uniform epitaxial NiSi2 layers formed at temperatures above 700 °C with a 20-nm Ni on high dose S+ implanted Si(100), whereas no epitaxy was observed for a 36-nm Ni layer. We assume that the presence of sulfur at the silicide/Si(100) interface favors the nucleation of the NiSi2 phase. The S atom distributions showed ultrasteep S depth profiles (3 nm/decade) in the silicon, which results from the snow-plow effect during silicidation and the segregation of S to the interface due to the low solubility of S in both Si and the silicide.