Abstract
Corundum structured metastable rhombohedral indium tin oxide (rh-ITO), which is known to grow as thin films, has attracted significant research interest; however, its properties, based on the Sn concentration, have not been evaluated in detail thus far. Herein, rh-ITO thin films comprising different Sn concentrations were grown on c-plane α-Al2O3 substrates with α-Ga2O3 buffer layers using the mist chemical vapor deposition method, and their properties were investigated. X-ray diffraction analysis revealed that c-plane rh-ITO thin films grew epitaxially at Sn concentrations of 0–10 at.%. The lowest thin film resistivity is determined to be approximately 3.3 × 10−4 Ω cm, which is sufficiently low for a transparent conductive oxide. The carrier concentration and mobility exhibited by the rh-ITO films were consistent with those of typical single-crystalline ITO films, which exhibited the most stable phase. The rh-ITO thin films exhibited high transmittance in the visible light region, and the absorption edge was blue-shifted with the increasing carrier concentration. This study demonstrates that rh-ITO can be used as a new transparent conductive oxide material for diverse applications.
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