Abstract
LiNbO 3 thin films have been deposited on c-cut single crystalline sapphire substrates (α-Al 2O 3) by the pulsed laser deposition technique. Crystalline quality and structural properties have been determined using Rutherford backscattering spectroscopy (RBS) and x-ray diffraction experiments. Under optimised conditions, the (001) epitaxial growth has been obtained with some grain misorientations in the plane and an average surface roughness of about 2 nm as measured by atomic force microscopy (AFM).
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