Abstract
AbstractThe heteroepitaxy of InP on Si substrates was investigated using MOCVD. A thin GaAs intermediate layer was used to alleviate the 8.4% lattice mismatch between InP and Si. With the use of this intermediate layer, four inch size, single domain InP epilayer with small residual stress was reproducibly grown on off-(100) oriented Si substrates. The etch pit density (EPD) of as-grown InP layer was 5x107~1x108 cm-2 . The post growth annealing of this epilayer at 800~850ºC in aPH3+H2 ambient reduced EPD to 1~2x107 cm-2
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