Abstract
Highly textured ZnO thin films were successfully grown on Si(111) by atomic layer deposition using an epitaxial AlN buffer layer at deposition temperatures between 100 and 300 °C. X-ray diffraction analysis proves an epitaxial relationship of ZnO[0001]//AlN[0001] and ZnO[112¯0]//AlN[112¯0]. Omega scans of the (0002) and (101¯0) reflections of ZnO demonstrate an improving crystalline quality for increasing deposition temperatures. An additional thermal postannealing step at 800 °C is found to be beneficial to further improve the crystal structure.
Highlights
Due to its wide and direct bandgap of 3.37 eV, an exciton binding energy of 59 meV, and its wurtzite structure with a high piezoelectric coefficient, ZnO is an attractive candidate for future optoelectronic devices as well as for piezoelectric applications
Textured ZnO thin films were successfully grown on Si(111) by atomic layer deposition using an epitaxial AlN buffer layer at deposition temperatures between 100 and 300 °C
The heteroepitaxial growth of ZnO films with good crystalline quality was predominantly reported directly on sapphire6–8 and on epitaxial GaN films grown on sapphire
Summary
Due to its wide and direct bandgap of 3.37 eV, an exciton binding energy of 59 meV, and its wurtzite structure with a high piezoelectric coefficient, ZnO is an attractive candidate for future optoelectronic devices as well as for piezoelectric applications. The heteroepitaxial growth of ZnO films with good crystalline quality was predominantly reported directly on sapphire and on epitaxial GaN films grown on sapphire.. The reports on the ALD of ZnO films on AlN, lack information about the crystalline quality and the in-plane orientation. The ZnO films grown by ALD on an molecular beam epitaxy grown AlN buffer layer by Wang et al. showed a preferred c-oriented growth but comparable information about the crystal quality or the in-plane orientation was not given. The epitaxial ALD of ZnO was already demonstrated on sapphire and GaN, a comprehensive study on the influence of deposition temperature and an additional postannealing treatment on the crystalline quality and on the in-plane orientation of the ZnO films is still missing. The results are compared with data available from the literature and critically evaluated
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