Abstract
High-quality diamond epitaxial films were obtained on Ib diamond (100) substrates by means of the microwave plasma-assisted chemical-vapor-deposition (CVD) method. For the source gas, CH4 and H2 gases were used in different CH4 concentrations (CH4/H2), from 1 vol% to 8 vol%. At CH4/H2=6%, the surfaces of the films were smooth and streaks were observed by reflection high-energy electron diffraction (RHEED). Raman spectra showed that they had no graphitic components. In contrast, Raman spectra showed that both the (110) epitaxial films and the polycrystalline films grown at CH4=6% had graphitic components.
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