Abstract
We prepared Heusler alloy Co2MnSi/MgO heterostructures on single-crystal Ge(001) substrates through magnetron sputtering for Co2MnSi and electron beam evaporation for MgO as a promising candidate for future generation spin-based functional devices. Structural investigations showed that the Co2MnSi/MgO heterostructure was grown epitaxially on a Ge(001) substrate with extremely smooth and abrupt interfaces and showed the L21 structure for the Co2MnSi film. Furthermore, a sufficiently high saturation magnetization (μs) value of 5.1 µB/f.u. at 10 K, which is close to the theoretically predicted μs of 5.0 µB/f.u. for half-metallic Co2MnSi, was obtained for prepared Co2MnSi films.
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