Epitaxial growth of GaN films on Si(110) substrates by rf‐MBE

Abstract

AbstractGaN films grown by rf‐MBE on Si(110) substrates using AlN buffer layers are investigated. Single crystalline AlN films are obtained by Al pre‐deposition during the buffer layer growth. 2‐dimensional epitaxial growth mode of GaN is confirmed by in‐situ RHEED observations. HRXRD results show that the FWHM values of diffraction peaks decrease with the increase of the film thickness. Atomically flat GaN surface morphology with mono‐layer steps is obtained and crack‐free GaN films until 2 μm are successfully achieved. Micro‐Raman measurements show that the tensile strain in the GaN films on Si(110) substrates is reduced compared to those on conventional Si(111) substrates. It is expectable that high‐quality III‐nitrides can be grown by rf‐MBE technique for device applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)