Epitaxial Growth of Gallium Arsenide on Germanium Substrates: III . Deposition on High Index Planes and on Curved Surfaces

Abstract

When depositing gallium arsenide on low index planes of germanium from the vapor phase by halogen transport, stacking faults are readily formed. Films free of these faults were obtained when planes that were at an angle of a few degrees with a {111} face or curved surfaces were used as substrates. It is suggested that fast propagation of steps along the surface caused the formation of new stacking faults parallel to the existing ones, thereby completing loops and preventing the propagation of the faults. The rate of growth was much faster on curved surfaces than over the {111} planes.