Epitaxial Growth of Gallium Arsenide on Germanium Substrates: I . The Relationship between Fault Formation in Gallium Arsenide Films and the Surface of Their Germanium Substrate

Abstract

Morphological and etching studies on films of gallium arsenide deposited on germanium substrates have revealed twin planes, grains, and stacking faults. The evidence suggests that these defects are related to the faceting of the substrate and to the presence of oxide films.