Abstract
Morphological and etching studies on films of gallium arsenide deposited on germanium substrates have revealed twin planes, grains, and stacking faults. The evidence suggests that these defects are related to the faceting of the substrate and to the presence of oxide films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
