Epitaxial growth of GaAs by low-pressure MOCVD

Abstract

The epitaxial growth of GaAs from trimethylgallium and arsine at 1–5 Torr was investigated. At deposition temperatures of 580–750°C the residual donor concentration decreased with increasing arsine excess, not increased as has been reported for higher pressures. Increases in growth rate also markedly reduced the rate of incorporation of the residual donor, and at high growth rates the films became p-type. Under optimum conditions the electron mobility and the residual impurity concentrations obtained were comparable to the best values reported for films grown using metalorganics.