Abstract
A layered cuprate film, (Cu,C)Ba2Can−1CunOx (n=1; (Cu,C)-1201), consisting of the charge reservoir block and the infinite layer was prepared by sputtering BaCu0.75Ox target on a (1 0 0) SrTiO3 substrate. The effects of the substrate temperature (Ts) and CO2 concentration (Cco2) in the discharge gas on the crystallinity of the films were systematically examined. The (Cu,C)-1201 film oriented along c-axis formed on the (1 0 0) SrTiO3 substrate. The φ-scan X-ray measurement of the films showed four-fold symmetry. The Cco2 and Ts strongly affected the crystallinity of the (Cu,C)-1201 film. The deposition conditions for a (Cu,C)-1201 film with a single-crystalline phase were as follows: discharge gas, Ar+CO2 (Cco2=2–8vol%); Ts 520–560°C and gas pressure, 1.33 Pa. Oxygen annealing of the (Cu,C)-1201 films in a sputtering chamber at near 15 Pa during the cooling process down to 100°C generated uncompensated electrical charges (holes), resulting in low resistivity. Metallic conduction down to 50 K was observed for a film deposited in Ar+CO2 gas (Cco2=3vol%); at a Ts of 530°C.
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