Abstract
We report fundamental issues and prospects of the rhombohedral corundum-structured III-oxide (III-O) alloy system constituted with α-M2O3 (M=metal element) materials. Successful epitaxial growth of α-Ga2O3 and α-In2O3 on sapphire (α-Al2O3) substrates has enabled the growth of α-(Al,Ga,In)2O3 semiconductor alloys, achieving the “band gap engineering” from 3.8eV (an experimental value) to 8.8eV. Transition-metal corundum-structured oxides (M=Cr, Fe, V, Ti) can be alloyed with the α-(Al,Ga,In)2O3 semiconductor alloys, leading to “function engineering”, that is, to tailor the materials functions. The corundum-structured III-O alloys will contribute to novel multifunctional devices in the future.
Published Version
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