Abstract

The epitaxial growth of CeO/sub 2/[100] films on [100] silicon substrates by dual ion beam sputtering has been studied. The measurements of X-ray /spl theta/-2/spl theta/ pattern, /spl phi/-scan, and rocking curve indicated that the CeO/sub 2/ films had good epitaxial characteristics with [100] orientation. The influences of the substrate temperature, the oxygen pressure, and amorphous SiO/sub 2/ layer of the Si substrate surface on the epitaxial growth of the CeO/sub 2/ layer were investigated.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.