Abstract
The epitaxial growth of CeO 2(1 0 0) films on (1 0 0) silicon substrates by dual ion beams sputtering was studied. The measurements of X-ray θ-2θ pattern, ϕ-scan and rocking curve indicated that the CeO 2 films had good epitaxial characteristics with (1 0 0) orientation. The experiments showed that the substrate temperature had only a weak influence on the orientation in a wide temperature range. In contrast to this, the oxygen pressure during the deposition had a strong influence on the growth.
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