Abstract
BiFeO3/TiN/MgO (001) films have been prepared by magneton sputtering, where TiN serves as a conductive under layer. X-ray diffraction profiles and cross-sectional transmission electron microscopy images reveal that not only (001)-epitaxial BiFeO3 films are obtained, but also both tetragonal and rhombohedral phases co-exist in BiFeO3 films. Their crystallographic relationship is shown as following: tetragonal-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100] and rhombohedral-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100]. Besides, an oxidized TiN layer (∼ 20 nm) has also been detected between BiFeO3 and TiN layers and its formation may originate from oxygen inter-diffusion from BiFeO3 layer. Despite of the existence of the oxidized TiN layer, it does not affect the epitaxial growth of BiFeO3 films. On the other hand, the coercivity electric field obtained in ferroelectric loop of BiFeO3 is greatly enhanced to 49 MV/cm due to the existence of oxidized TiN layer.
Highlights
Multiferroic materials that simultaneously own electric and magnetic ordering have been widely investigated due to their promising multifunctional characters.[1]
In the present work we proposed titanium nitride (TiN) as an alternative conductive layer and examined BFO structure growth on the top of TiN layer on MgO substrates
In the in-plane scan with χ ∼ 90 ◦ (Fig. 1 (b)), the two peaks can be attributed to 100 of T and R phase, respectively. In both out-of-plane and in-plane XRD measurements, no impurity phase can be detected. This result suggests that two BFO phases were likely grown onto TiN under layers and c-axis of BFO was oriented perpendicular to the film plane
Summary
Multiferroic materials that simultaneously own electric and magnetic ordering have been widely investigated due to their promising multifunctional characters.[1]. Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition This result suggests that two BFO phases were likely grown onto TiN under layers and c-axis of BFO (both R and T phases) was oriented perpendicular to the film plane.
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