Abstract
Insulating buffer layers, CeO2/Ce0.12Zr0.88O2 and SrTiO3/Ce0.12Zr0.88O2 films, are grown on Si(001) substrates by the pulsed laser deposition technique, and ferroelectric Bi4Ti3O12 films are grown on these buffer layers by the molecular beam epitaxy technique. X-ray diffraction data show that the c-axes of the Bi4Ti3O12 films grown on CeO2/Ce0.12Zr0.88O2 and SrTiO3/Ce0.12Zr0.88O2 buffer layers are normal and inclined 45° to the buffer layer surface, respectively. Memory windows appearing in capacitance and voltage characteristics of diode structures with Pt top electrodes are 1.2 V for a Pt/Bi4Ti3O12/CeO2/Ce0.12Zr0.88O2/Si diode, and 3.5 V for a Pt/Bi4Ti3O12/SrTiO3/Ce0.12Zr0.88O2/Si diode. This difference in magnitude may be due to the different growth orientation and strongly anisotropic polarization of Bi4Ti3O12.
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