Abstract
Epitaxial growth of 0.95(Bi0.5K0.5)TiO3-0.05Bi(Mg0.5Ti0.5)O3(BKT-BMT) films on silicon substrates at the morphotropic phase boundary composition has been achieved for the first time using pulsed laser deposition. Perovskite films with a cube-on-cube relationship grew on the platinum bottom electrode at a substrate temperature of 450 °C–550 °C. Both the Bi/(Mg + Ti) and K/(Mg + Ti) ratios decreased with increasing substrate temperature. A film with an approximately stoichiometric composition was obtained at a substrate temperature of 450 °C. The BKT-BMT film has a high lattice anisotropy parameter (c/a) of 1.048 because a large strain of 0.7%–1.0% is introduced into the film. Its remanent polarization (Pr) and coercive field (Ec) are 60 μC cm−2 and 200 kV cm−1, respectively. The transverse piezoelectric coefficient (e31,f) of the BKT-BMT films is −2.2 C cm−2. The BKT-BMT film has superior displacement linearity with regard to different electric fields.
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