Abstract
The asymmetric α-Si 3N 4 nanocombs have been prepared by direct current arc discharge method without the addition of any catalyst or template. The nanocombs are composed of closely packed Si 3N 4 nanowires, which grow perpendicular to the central axial nanorods in an epitaxial manner. The growth mechanism of the α-Si 3N 4 nanocombs can be considered as a combination of the vapor–solid mechanism and the secondary epitaxial nucleation process. The photoluminescence spectra of the nanocombs show a strong blue light emission peak at about 424 nm.
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