Abstract
The epitaxial growth of aluminum nitride on the basal planes of hexagonal silicon carbide and aluminum nitride substrates has been studied using the ammonolysis of aluminum trichloride in a gas flow system. Adherent and continuous films were obtained under a wide range of experimental conditions, and the substrate temperature is the most influential factor determining the crystalline perfection of the deposit. In the temperature range 1200–1250°C, single crystal aluminum nitride films epitaxial with respect to the substrates, as thick as 25 μ, have been deposited reproducibly by using reactant mixtures with AlCl 3/NH 3 molar ratios in the range of 5 × 10 −4 to 5 × 10 −3. The use of mercury and hydrogen selenide as dopants has produced, respectively, p- and n-type aluminum nitride films.
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