Abstract
Epitaxial growth of Ag(Al,Ga)S2 layers with the [Al]/([Al]+[Ga]) ratio less than 0.3 was demonstrated on GaAs(100) substrate through multisource evaporation. The oriented domain with the a-axis normal to the substrate disappeared by stoichiometry control of the [Ag]/([Al]+[Ga]) ratio. The 180°-rotated {112} twin crystal regions slightly appeared in the range of [Al]/([Al]+[Ga])>0. Reflectance anomaly spectra due to the free exciton were observed in the layers.
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