Abstract
Epitaxial growth of Ag(Al,Ga)S2 layers with the [Al]/([Al]+[Ga]) ratio less than 0.3 was demonstrated on GaAs(100) substrate through multisource evaporation. The oriented domain with the a-axis normal to the substrate disappeared by stoichiometry control of the [Ag]/([Al]+[Ga]) ratio. The 180°-rotated {112} twin crystal regions slightly appeared in the range of [Al]/([Al]+[Ga])>0. Reflectance anomaly spectra due to the free exciton were observed in the layers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
