Abstract
Homoepitaxial selective growth of a GaAs nanoscale, high-aspect ratio, one-dimensional (1D) grating with vertical facets is reported. For a pattern direction along [110], the kinetics of faceting in selective molecular-beam epitaxy (MBE) induce (11¯0)-type facets vertical to a GaAs(001) substrate near the boundary between an SiO2 mask and an open substrate area. On a 1.25-μm period, 1D stripe, SiO2-patterned GaAs(001) substrate with an opening width of ∼300nm, vertical faceting results in a grating structure consisting of 2.8-μm-high, 820-nm-wide features. Kinetics of faceting in selective MBE is explained as a result of the minimization of total surface energy.
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