Epitaxial Growth of 4H-SiС Using Si<sub>2</sub>(CH<sub>3</sub>)<sub>6</sub>+Si<sub>2</sub>Cl<sub>6</sub>+C<sub>3</sub>H<sub>8</sub>+H<sub>2</sub> System by Atmospheric Pressure Hot CVD Method

Abstract

The chlorinated precursor is recently focused for high growth rate and high quality epitaxial layer. In the previous studies, the addition of chlorinated species from Si2Cl6 in the gas phase eliminated simultaneous Si nucleation which interferes with epitaxy. In this work, the characterization of epitaxial layers grown with chlorinated species is focused. High growth rate of 30 μm/h was achieved by using Si2(CH3)6 and Si2Cl6 as chlorinated precursors. We concluded that high growth rate was achieved by using HMDS and HCDS as the precursor of SiC at growth temperature of 1600 °C.