Abstract
The epitaxial growth process of titanium nitride (TiN) films, formed by implanting nitrogen ions (N2+) with 62 keV into 100-nm-thick Ti films grown on NaCl substrates held at 250 °C, has been studied by transmission electron microscopy, Rutherford backscattering spectrometry, and elastic recoil detection analysis. It has been revealed that the (001)-oriented TiNy is epitaxially grown by N implantation into the as-grown (03⋅5)-oriented hcp Ti. The TiNy is formed by the transformation of the hcp Ti to (001)-oriented fcc Ti during the N implantation, partially inheriting the atomic arrangement of the square and/or the octahedron of the hcp Ti, as well as the occupation of N in octahedral sites of the fcc Ti. Strain due to the expansion of the lattice and/or the volume of hcp Ti by N implantation can be considered as one of the driving forces for the hcp–fcc transformation of the Ti lattice. The nitriding mechanism of epitaxial Ti thin films is discussed.
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