Abstract
The growth and structural characterization of epitaxial erbium silicide on the (100)Si substrate are studied by transmission electron microscopy, reflection high-energy electron diffraction, and X-ray diffractometry. Erbium silicides (ErSi 2− x ) grow by annealing above 400°C after the deposition of Er film. The ErSi 2− x film consists of two types of domains which have two different azimuthal orientations making an angle of 90° to each other. The epitaxial relationships between the hexagonal ErSi 2− x film and the (100)Si substrate are [0001]ErSi 2− x ‖[01 1 ]Si and [0001]ErSi 2− x ‖[0 11 ]Si in the (1 1 00) ErSi 2− x ‖(100)Si plane relation. The two types of domains in the ErSi 2− x film are equivalent in volume fraction and crystalline quality, which has been proved from the equivalent integrated intensities of (2 2 0 1 ) asymmetric reflection of X-ray diffraction.
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