Abstract
Epitaxial cadmium zinc telluride (CdZnTe) films have been grown on GaAs(100) substrates by the remote plasma‐enhanced metallorganic chemical vapor deposition method. The growth was carried out at a low substrate temperature of 200°C. In this system, we obtained epitaxial films with composition x in the range 0‐1. When nitrogen radicals were introduced in addition to hydrogen radicals, p‐type CdZnTe films with nitrogen acceptors were obtained. Although as‐grown samples showed high resistivity of more than , after annealing treatment at 600°C for 10 min, the resistivity and carrier concentration at an x value of 0.96 were measured as and , respectively. © 1999 The Electrochemical Society. All rights reserved.
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