Epitaxial growth and electrical properties of VO2 on [LaAlO3]0.3[Sr2AlTaO6]0.7 (111) substrate

Abstract

The authors report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition, of vanadium dioxide (VO2) thin films synthesized on [LaAlO3]0.3[Sr2AlTaO6]0.7 (LSAT) (111) (LSAT) substrates by pulsed laser deposition. X-ray diffraction studies show that the epitaxial relationship between the VO2 thin films and LSAT substrate is given as VO2(020)||LSAT(111) and VO2[001]||LSAT[112¯]. The authors observed a sharp 4 orders of magnitude change in the longitudinal resistance for the VO2 thin films around the transition temperature. The authors also measured distinct Raman spectra below and above the transition point indicating a concomitant structural transition between the insulator and metallic phases, in agreement with past investigations.