Abstract
We have investigated the epitaxial growth of Cr-doped ZnSnAs2 thin films as a function of Zn and Sn fluxes, and characterized their structural, electrical and magnetic properties for possible application in ZnSnAs2-based devices. Cr-doped ZnSnAs2 thin films prepared using growth conditions favoring Cr atom substitution on Sn sites showed hole concentrations on the order of 1017 cm−3, but no detectable ferromagnetic properties. On the other hand, films prepared under growth conditions favoring Cr atom substitution on Zn sites, while exhibiting low (non-detectable) hole carrier concentrations, exhibited ferromagnetism even at room-temperature. Our present experimental results are consistent with those reported by Kizaki et al. where they predicted above-room-temperature ferromagnetism for Cr doping at Zn sites in the Cr-doped ZnSnAs2 system.
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