Abstract
Epitaxial films of WS2 have been grown on graphite (HOPG) by metal organic molecular beam epitaxy (MO-MBE). As precursors W(CO)6 and S have been used. The growth temperatures are rather high and the deposition efficiency is very low which is related to the chemical inertness of the involved van der Waals planes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
