Epitaxial film transfer technique for producing single crystal Si film on an insulating substrate

Abstract

Epitaxial film transfer, a new technique for producing a single crystal Si film with both large size and high quality on an insulating substrate, is demonstrated. The technique in which an epitaxial Si film is transferred to a secondary substrate by using three fundamental processes of epitaxial growth, bonding of two wafers, and substrate elimination, can produce a 2-in. single crystal Si film as thin as 1.5 μm on a insulating substrate. Thickness variation can be controlled to ±0.06 μm across a 2-in. wafer. An epitaxial Si film is transferred without significant degradation in quality although a fine film waving exists.