Abstract
We demonstrate the epitaxial growth of thin films by thermal laser evaporation. Epitaxial metal oxide films are grown by laser evaporating Ni, V, and Ru elemental sources in a variety of oxygen-ozone atmospheres on laser-heated oxide substrates. This results in NiO (111), VO2 (M1) (020), and RuO2 (110) epitaxial films on Al2O3 (0001) or MgO (100) substrates. The films show well-defined crystallographic orientation relationships with the substrates, as confirmed by in-plane and out-of-plane x-ray measurements. The results reveal the potential of thermal laser epitaxy for the epitaxial growth of ultrahigh-purity oxide heterostructures.
Highlights
The new physics and technological applications possible with oxide-based heterostructures demand the synthesis of ultraclean oxide materials with well-controlled atomic structure and composition
We demonstrate the epitaxial growth of thin films by thermal laser evaporation
It can guarantee the high purity of the grown thin films by preventing impurities from being incorporated into the sources because most solid sources can support themselves as their own crucibles due to a large temperature gradient by focused laser heating combined with efficient thermal losses due to blackbody radiation in thermal laser evaporation
Summary
The new physics and technological applications possible with oxide-based heterostructures demand the synthesis of ultraclean oxide materials with well-controlled atomic structure and composition. Thermal laser evaporation is a new deposition technique that enables ultraclean oxide growth by thermally evaporating pure metal sources by laser-induced local heating in an oxidizing atmosphere.[1,2,3]. The growth of a large variety of metal and oxide films has been demonstrated, epitaxial growth has not yet been achieved by thermal laser evaporation. Oxide heterointerfaces can lead to new and unexpected effects.[4,5,6,7] thermal laser evaporation has proven to be advantageous for growing oxide films, the epitaxy by thermal laser evaporation (called thermal laser epitaxy, TLE) of oxides using pure metal sources in oxidizing atmosphere needs to be demonstrated. Our results reveal that TLE has great potential for the epitaxial growth of metal oxide thin films
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
