Abstract
Epitaxial Fe contacts have been fabricated onto the top half of free-standing, Te-doped GaAs nanowires (NWs) via electrodeposition. Electrical isolation from the substrate via a polymeric layer enabled the measurement of electrical transport through individual wires. Using a fixed probe within a scanning electron microscope, an average metal-semiconductor diode barrier height of 0.69 ± 0.03 eV (ideality factor 1.48 ± 0.02) was found.
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