Abstract
An epitaxial Ir-silicide film was grown on top of a p-Si(100) substrate a temperature of 450°C in an ultra-high vacuum. The epitaxial Ir-silicide film was identified to be Ir 3Si 4 with four types of epitaxial modes. The average Schottky barrier height of the epitaxial Ir 3Si 4/p-Si(100) diode at 60–100 K was determined to be 0.177 eV with an ideality factor of 1.12. In contrast, a polycrystalline IrSi/p-Si(100) diode was formed by conventional room-temperature deposition and annealing at high temperatures, and its average Schottky barrier height was 0.157 eV with an ideality factor of 1.08. The difference in Schottky barrier height was attributed to the merged effect of phase composition and microstructure difference between Ir 3Si 4 and IrSi silicides. The epitaxial Ir 3Si 4/p-Si(100) diode has higher n values than polycrystalline IrSi/p-Si(100) due to more interfacial states of oxygen remaining at the Ir 3Si 4/p-Si(100) interface.
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