Abstract
BaTiO3 thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600°C to 800°C and from 2×10-4 Torr O2 to 1×10-2 Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO3 thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. Epitaxial BaTiO3 had quite smooth surface of less than 100 Å in roughness. BaTiO3 grown on 40-Å-thick epitaxial MgO was also epitaxial although defect density in BaTiO3 looked higher than that in BaTiO3 grown on 400-Å-thick MgO. The interfaces of BaTiO3/40-Å-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.
Published Version
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