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Abstract
We study the effect of polymer coating, pressure, temperature, and light on the electrical characteristics of monolayer back-gated transistors with contacts. Our investigation shows that the removal of a layer of poly(methyl methacrylate) (PMMA) or a decrease of the pressure change the device conductivity from p- to n-type. From the temperature behavior of the transistor transfer characteristics, a gate-tunable Schottky barrier at the contacts is demonstrated and a barrier height of 70 meV in the flat-band condition is measured. We also report and discuss a temperature-driven change in the mobility and the subthreshold swing that is used to estimate the trap density at the interface. Finally, from studying the spectral photoresponse of the , it is proven that the device can be used as a photodetector with a responsivity of at and optical power.
Highlights
The continuous downscaling of the channel length and thickness in modern field effect transistors (FETs) has increased the need for atomically-layered materials to minimize short channel effects at extreme scaling limits [1,2]
Layered transition metal dichalcogenides (TMDs), owing to their two-dimensional structure, reasonable charge-carrier mobilities, and the absence of dangling bonds can enable extreme channel length scaling and have recently emerged as promising materials for future electronic and optoelectronic devices [3,4,5,6,7]. These graphene-like materials offer the advantages of sizeable and non-zero bandgap, high on/off ratio and quasi-ideal subthreshold swing, mechanical flexibility, and thermal and chemical stability. Their electronic transport properties are strongly influenced by the choice of the metal contacts [8,9,10], by interface traps and impurities [11,12], as well as by structural defects and environmental exposure [13,14,15,16,17]
We study back-gated monolayer WSe2 devices with Ni contacts, measuring their electrical characteristics under different conditions, considering, for instance, the effect of a poly(methyl methacrylate) (PMMA) coating layer, and the dependence on the chamber pressure and the sample temperature
Summary
The continuous downscaling of the channel length and thickness in modern field effect transistors (FETs) has increased the need for atomically-layered materials to minimize short channel effects at extreme scaling limits [1,2]. Layered transition metal dichalcogenides (TMDs), owing to their two-dimensional structure, reasonable charge-carrier mobilities, and the absence of dangling bonds can enable extreme channel length scaling and have recently emerged as promising materials for future electronic and optoelectronic devices [3,4,5,6,7].
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