Abstract
Low-lying conduction band wave functions are calculated for semi-infinite GaAs(110), using the layer--Korringa-Kohn-Rostoker method. It is found that the envelope functions for the orbitals with even mirror symmetry are in quadrature with the envelopes for the odd orbitals. The even orbitals dominate, and a single envelope function with a node close to the surface works well. The tunneling into the surface barrier is rather constant for the states considered, within 0.28 eV of the bottom of the conduction band. Thus recent scanning tunneling microscopy experiments on subsurface impurity screening in accumulation layers with this amount of band-bending probe the surface charge density.
Published Version
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