Abstract
Devices that convert infrared (IR) photons into visible photons have various applications, including IR detection, bio-imaging, and security. This study introduces an optoelectronic up-conversion device based on quantum dots (QDs) that combines an IR lead sulfide (PbS) QD photodiode (PD) with a visible green cadmium selenide (CdSe) quantum dot light-emitting diode (QLED). The device is assembled using a layer-by-layer wet coating method. To improve exciton extraction in the PbS layer, a ligand exchange process has been employed to further enhance the film quality as well as charge carrier property, which significantly reduces the applying current density of the corresponding device at 10 cd/m2 of brightness. Our quantum dot devices can effectively detect a 940 nm IR light source and produce clear visible images with a spatial resolution of approximately 50 µm. This feature is particularly promising for imaging sensing applications.
Published Version
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