Abstract
This study introduces a tin-free, stable, lead-free, double perovskite solar cell device with improved power conversion efficiency (PCE). Different electron transporting layers (ETLs) including IGZO, AZO, LBSO, and TiO2 and hole transporting layers (HTLs) as Cu2O, CNTS, ZnTe, and P3HT are considered for optimization with Cs2AgBiBr6 and fluorine-doped tin oxide as double perovskite layer and substrate respectively. The effect of various device parameters on the device performance has been studied. The device configuration of FTO/AZO/Cs2AgBiBr6/ZnTe achieves a PCE of 26.89 %, fill factor (FF) of 83.87 %, open-circuit voltage (VOC) of 1.50 V, and short-circuit current (JSC) of 21.35 mA/cm2.
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