Abstract
The combination of UV-ozone and Al-doping enhancements in the ZnO ETL layer was studied for fullerene-based (P3HT:PCBM) and nonfullerene-based (J71:m-ITIC) solar cells. The study focused on morphological and interfacial defects and their relation to the electrical and optical properties of different Al-doped ZnO layers. The study also investigated the surface recombination velocity at the interface of the ZnO/active layer, as well as the carrier lifetime and diffusion length of the active layer theoretically. The most effective Al-doping dosage was 3% for P3HT:PCBM and 2% for J71:m-ITIC, attributed to the varying sensitivity of the active layer materials to morphological enhancement.
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